Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers

KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today started shipping test samples of “TW007D120E,” a 1200V trench-gate SiC MOSFET primarily intended for power supply systems in next-generation AI data centers that is also suitable for use in renewable energy-related equipment. With the rapid expansion of generative AI, increasing power consumption has become... The post Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers appeared first on Montreal Gazette .

Original source: Montreal Gazette